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| 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM * Application for Ultra-compact ECM 0.220.05 1.20.05 0.80.05 0.320.05 3 2 0.10.05 Unit: mm Absolute Maximum Ratings (Ta=25C) 0.45 0.45 1.40.05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 -55~125 Unit V mA mW C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.3950.03 C 0.90.1 1 TESM3 JEDEC JEITA TOSHIBA 1.Drain 2.Source 3.Gate 2-1R1A Weight: 2.2mg (typ.) IDSS CLASSIFICATION A-Rank 80 to 200A B-Rank 170 to 300A C-Rank 270 to 480A BK-Rank 150 to 350A Marking Type Name Equivalent Circuit D 3 IDSS Classification Symbol A :A -Rank B :B-Rank , BK-Rank C :C-Rank G S 1 2007-11-01 2SK3376TK Electrical Characteristics (A-Rank IDSS Ta=25C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Forward transfer admittance Input capacitance Voltage Gain Delta Voltage Gain Delta Voltage Gain Noise Voltage Symbol IDSS ID Test Condition VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2k,Cg = 3pF Min 80 -0.1 0.7 -13.5 Typ. 1.4 5.5 Max 200 240 -0.8 -9.0 -2.0 -4.0 47 Unit A A V mS pF dB dB dB mV VGS(OFF) VDS = 2 V, ID = 1A |Yfs| Ciss Gv DGv(f) VDS = 2 V,VGS = 0V VDS = 2 V, VGS = 0, f = 1 MHz VDD = 2V, RL= 2k,Cg = 3pF, f = 1kHz VDD = 2V, RL= 2k,Cg = 3pF,f = 1kHz to 100Hz DGv(V) VDD = 2V to 1V, RL= 2k,Cg = 3pF,f = 1kHz VN VDD = 2V, RL= 1k,Cg = 3pF,Gv=80dB,f=A-Curve Filter Electrical Characteristics (B-Rank IDSS Ta=25C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Forward transfer admittance Input capacitance Voltage Gain Delta Voltage Gain Delta Voltage Gain Noise Voltage Symbol IDSS ID Test Condition VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2k,Cg = 3pF Min 170 -0.15 0.7 -11.5 Typ. 1.4 5.5 Max 300 340 -1.0 -8.0 -2.0 -7.0 50 Unit A A V mS pF dB dB dB mV VGS(OFF) VDS = 2 V, ID = 1A |Yfs| Ciss Gv DGv(f) VDS = 2 V,VGS = 0V VDS = 2 V, VGS = 0, f = 1 MHz VDD = 2V, RL= 2k,Cg = 3pF, f = 1kHz VDD = 2V, RL= 2k,Cg = 3pF,f = 1kHz to 100Hz DGv(V) VDD = 2V to 1V, RL= 2k,Cg = 3pF,f = 1kHz VN VDD = 2V, RL= 1k,Cg = 3pF,Gv=80dB,f=A-Curve Filter Electrical Characteristics (C-Rank IDSS Ta=25C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Forward transfer admittance Input capacitance Voltage Gain Delta Voltage Gain Delta Voltage Gain Noise Voltage Symbol IDSS ID Test Condition VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2k,Cg = 3pF Min 270 -0.2 0.7 -10.5 Typ. 1.4 5.5 Max 480 520 -1.2 -6.75 -2.0 -20 75 Unit A A V mS pF dB dB dB mV VGS(OFF) VDS = 2 V, ID = 1A |Yfs| Ciss Gv DGv(f) VDS = 2 V,VGS = 0V VDS = 2 V, VGS = 0, f = 1 MHz VDD = 2V, RL= 2k,Cg = 3pF, f = 1kHz VDD = 2V, RL= 2k,Cg = 3pF,f = 1kHz to 100Hz DGv(V) VDD = 2V to 1V, RL= 2k,Cg = 3pF,f = 1kHz VN VDD = 2V, RL= 1k,Cg = 3pF,Gv=80dB,f=A-Curve Filter 2 2007-11-01 2SK3376TK Electrical Characteristics (BK-Rank IDSS Ta=25C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Forward transfer admittance Input capacitance Voltage Gain Delta Voltage Gain Delta Voltage Gain Noise Voltage Symbol IDSS ID Test Condition VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2k,Cg = 3pF Min 150 -0.125 0.7 -12.0 Typ. 1.4 5.5 Max 350 390 -1.1 -7.50 -2.0 -13.5 65 Unit A A V mS pF dB dB dB mV VGS(OFF) VDS = 2 V, ID = 1A |Yfs| Ciss Gv DGv(f) VDS = 2 V,VGS = 0V VDS = 2 V, VGS = 0, f = 1 MHz VDD = 2V, RL= 2k,Cg = 3pF, f = 1kHz VDD = 2V, RL= 2k,Cg = 3pF,f = 1kHz to 100Hz DGv(V) VDD = 2V to 1V, RL= 2k,Cg = 3pF,f = 1kHz VN VDD = 2V, RL= 1k,Cg = 3pF,Gv=80dB,f=A-Curve Filter 3 2007-11-01 2SK3376TK ID - VDS 600 Common Source Ta = 25 C 600 VDS=2V Common Source Ta = 25 C ID - VGS (A) (A) 500 500 ID Drain Current + 0.1 V 300 + 0.05 V VGS = 0 V - 0.05 V - 0.1 V 100 ID 400 IDSS=200A IDSS=450A 400 300A Drain Current 300 200 200 100A 100 200A 0 0 1.0 2.0 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 Drain - Source voltage VGS (V) Gate - Source voltage VGS (V) |Yfs| - IDSS 3 VGS(OFF) - IDSS -500 Forward transfer admittance |Yfs| (mS) Gate-Source Cut-off Voltage VGS(OFF) (V ) -400 2 -300 -200 VGS(OFF):VDS=2V ID = 1A -100 IDSS:VDS=2V VGS=0V Common Source Ta = 25 C 0 100 200 300 400 500 600 1 |Yfs|:VDS=2V VGS=0V IDSS: VDS=2V VGS=0V Common Source Ta = 25 C 100 200 300 400 500 600 0 0 Drain Current IDSS (A) Drain Current IDSS (A) Gv- IDSS 0 DGv(V)- IDSS -3.0 DGv:VDD=2V to 1.5V Cg=5pF RL= 2.2k, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C (dB) -1 -2.5 Voltage Gain Gv (dB) DGv(V) Delta Voltage Gain Gv:VDD=2V Cg=5pF RL= 2.2k, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C 0 100 200 300 400 500 600 -2.0 -2 -1.5 -3 -1.0 -4 -0.5 -5 0 0 100 200 300 400 500 600 Drain Current IDSS (A) Drain Current IDSS (A) 4 2007-11-01 2SK3376TK VN - IDSS 60 VN:VDD=2V Cg=10pF RL= 1k f=1kHz 80dB AMP A-Curve Filter IDSS: VDS=2V VGS=0V Common Source Ta = 25C 2.0 THD- IDSS THD:VDD=2V Cg=5pF RL= 2.2k f=1kHz vin=50mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C (mV) Total Harmonic Distortion THD (%) 50 1.5 VN Noise Voltage 40 30 1.0 20 0.5 10 0 0 0 100 200 300 400 500 600 0 100 200 300 400 500 600 Drain Current IDSS (A) Drain Current IDSS (A) Ciss - VDS 10 (pF) Input capacitance Ciss 5 3 1 VGS=0V f=1kHz Common Source Ta = 25C 1 5 10 Drain - Source voltage VDS (V) 5 2007-11-01 2SK3376TK 6 2007-11-01 2SK3376TK RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01 |
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